APTM120DA30CT1G
Part Number APTM120DA30CT1G
Manufacturer Microsemi
Description MOSFET N-CH 1200V 31A SP1
Quantity Available 31170 pieces
Datasheets APTM120DA30CT1G.pdf
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Technical Information of APTM120DA30CT1G
Manufacturer Part Number APTM120DA30CT1G Category Discrete Semiconductor
Manufacturer Microsemi Description MOSFET N-CH 1200V 31A SP1
Package / Case Bulk Quantity in 7 days 0
Series POWER MOS 8™ Packaging Bulk
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 31A
Vgs(th) (Max) @ Id 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 560nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 14560pF @ 25V FET Feature -
Power Dissipation (Max) 657W (Tc) Rds On (Max) @ Id, Vgs 360 mOhm @ 25A, 10V
Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount
Supplier Device Package SP1 Package / Case SP1
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