EPC2010
Part Number EPC2010
Manufacturer EPC
Description TRANS GAN 200V 12A BUMPED DIE
Quantity Available 20710 pieces
Datasheets EPC2010.pdf
EPC2010 Price Request Price & Lead Time Online
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Technical Information of EPC2010
Manufacturer Part Number EPC2010 Category Discrete Semiconductor
Manufacturer EPC Description TRANS GAN 200V 12A BUMPED DIE
Package / Case Cut Tape (CT) Quantity in 7 days 0
Series eGaN® Packaging Cut Tape (CT)
FET Type N-Channel Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 12A (Ta)
Vgs(th) (Max) @ Id 2.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 540pF @ 100V FET Feature -
Power Dissipation (Max) - Rds On (Max) @ Id, Vgs 25 mOhm @ 6A, 5V
Operating Temperature -40°C ~ 125°C (TJ) Mounting Type Surface Mount
Supplier Device Package Die Package / Case Die
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