| EPC2010 | |
|---|---|
| Part Number | EPC2010 |
| Manufacturer | EPC |
| Description | TRANS GAN 200V 12A BUMPED DIE |
| Quantity Available | 20710 pieces |
| Datasheets | EPC2010.pdf |
| EPC2010 Price | Request Price & Lead Time Online or Email us: [email protected] |
| Technical Information of EPC2010 | |||
|---|---|---|---|
| Manufacturer Part Number | EPC2010 | Category | Discrete Semiconductor |
| Manufacturer | EPC | Description | TRANS GAN 200V 12A BUMPED DIE |
| Package / Case | Cut Tape (CT) | Quantity in 7 days | 0 |
| Series | eGaN® | Packaging | Cut Tape (CT) |
| FET Type | N-Channel | Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 200V | Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 3mA | Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 100V | FET Feature | - |
| Power Dissipation (Max) | - | Rds On (Max) @ Id, Vgs | 25 mOhm @ 6A, 5V |
| Operating Temperature | -40°C ~ 125°C (TJ) | Mounting Type | Surface Mount |
| Supplier Device Package | Die | Package / Case | Die |
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