| EPC8005ENGR | |
|---|---|
| Part Number | EPC8005ENGR |
| Manufacturer | EPC |
| Description | TRANS GAN 65V 2.9A BUMPED DIE |
| Quantity Available | 23350 pieces |
| Datasheets | EPC8005ENGR.pdf |
| EPC8005ENGR Price | Request Price & Lead Time Online or Email us: [email protected] |
| Technical Information of EPC8005ENGR | |||
|---|---|---|---|
| Manufacturer Part Number | EPC8005ENGR | Category | Discrete Semiconductor |
| Manufacturer | EPC | Description | TRANS GAN 65V 2.9A BUMPED DIE |
| Package / Case | Tray | Quantity in 7 days | 0 |
| Series | eGaN® | Packaging | Tray |
| FET Type | N-Channel | Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 65V | Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 0.22nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 29pF @ 32.5V | FET Feature | - |
| Power Dissipation (Max) | - | Rds On (Max) @ Id, Vgs | 275 mOhm @ 500mA, 5V |
| Operating Temperature | -40°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
| Supplier Device Package | Die | Package / Case | Die |
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