FQI4N80TU
Part Number FQI4N80TU
Manufacturer N/A
Description MOSFET N-CH 800V 3.9A I2PAK
Quantity Available 19690 pieces
Datasheets FQI4N80TU.pdf
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Technical Information of FQI4N80TU
Manufacturer Part Number FQI4N80TU Category Discrete Semiconductor
Manufacturer N/A Description MOSFET N-CH 800V 3.9A I2PAK
Package / Case Tube Quantity in 7 days 200
Series QFET® Packaging Tube
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 880pF @ 25V
Vgs (Max) ±30V FET Feature -
Power Dissipation (Max) 3.13W (Ta), 130W (Tc) Rds On (Max) @ Id, Vgs 3.6 Ohm @ 1.95A, 10V
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Supplier Device Package I2PAK Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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