GA04JT17-247
Part Number GA04JT17-247
Manufacturer GeneSiC Semiconductor
Description TRANS SJT 1700V 4A TO-247AB
Quantity Available 72400 pieces
Datasheets GA04JT17-247.pdf
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Technical Information of GA04JT17-247
Manufacturer Part Number GA04JT17-247 Category Discrete Semiconductor
Manufacturer GeneSiC Semiconductor Description TRANS SJT 1700V 4A TO-247AB
Package / Case Tube Quantity in 7 days 0
Series - Packaging Tube
FET Type - Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C 4A (Tc) (95°C)
Drive Voltage (Max Rds On, Min Rds On) - Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds -
Vgs (Max) 3.45V FET Feature -
Power Dissipation (Max) 106W (Tc) Rds On (Max) @ Id, Vgs 480 mOhm @ 4A
Operating Temperature 175°C (TJ) Mounting Type Through Hole
Supplier Device Package TO-247AB Package / Case TO-247-3
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