GA20SICP12-247
Part Number GA20SICP12-247
Manufacturer GeneSiC Semiconductor
Description TRANS SJT 1200V 45A TO247
Quantity Available 81100 pieces
Datasheets GA20SICP12-247.pdf
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Technical Information of GA20SICP12-247
Manufacturer Part Number GA20SICP12-247 Category Discrete Semiconductor
Manufacturer GeneSiC Semiconductor Description TRANS SJT 1200V 45A TO247
Package / Case Tube Quantity in 7 days 0
Series - Packaging Tube
FET Type - Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 3091pF @ 800V FET Feature -
Power Dissipation (Max) 282W (Tc) Rds On (Max) @ Id, Vgs 50 mOhm @ 20A
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole
Supplier Device Package TO-247AB Package / Case TO-247-3
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