IXFL38N100Q2
Part Number IXFL38N100Q2
Manufacturer IXYS Corporation
Description MOSFET N-CH 1000V 29A ISOPLUS264
Quantity Available 44340 pieces
Datasheets IXFL38N100Q2.pdf
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Technical Information of IXFL38N100Q2
Manufacturer Part Number IXFL38N100Q2 Category Discrete Semiconductor
Manufacturer IXYS Corporation Description MOSFET N-CH 1000V 29A ISOPLUS264
Package / Case Tube Quantity in 7 days 0
Series HiPerFET™ Packaging Tube
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V (1kV) Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 13500pF @ 25V
Vgs (Max) ±30V FET Feature -
Power Dissipation (Max) 380W (Tc) Rds On (Max) @ Id, Vgs 280 mOhm @ 19A, 10V
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Supplier Device Package ISOPLUS264™ Package / Case ISOPLUS264™
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