IXTH1N300P3HV
Part Number IXTH1N300P3HV
Manufacturer IXYS Corporation
Description 2000V TO 3000V POLAR3 POWER MOSF
Quantity Available 34330 pieces
Datasheets IXTH1N300P3HV.pdf
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Technical Information of IXTH1N300P3HV
Manufacturer Part Number IXTH1N300P3HV Category Discrete Semiconductor
Manufacturer IXYS Corporation Description 2000V TO 3000V POLAR3 POWER MOSF
Package / Case Tube Quantity in 7 days 0
Series - Packaging Tube
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 3000V (3kV) Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 895pF @ 25V
Vgs (Max) ±20V FET Feature -
Power Dissipation (Max) 195W (Tc) Rds On (Max) @ Id, Vgs 50 Ohm @ 500mA, 10V
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Supplier Device Package TO-247HV Package / Case TO-247-3 Variant
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