IXTP3N100D2
Part Number IXTP3N100D2
Manufacturer IXYS Corporation
Description MOSFET N-CH 1000V 3A TO220AB
Quantity Available 20490 pieces
Datasheets IXTP3N100D2.pdf
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Technical Information of IXTP3N100D2
Manufacturer Part Number IXTP3N100D2 Category Discrete Semiconductor
Manufacturer IXYS Corporation Description MOSFET N-CH 1000V 3A TO220AB
Package / Case Tube Quantity in 7 days 0
Series - Packaging Tube
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V (1kV) Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 37.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 1020pF @ 25V
Vgs (Max) ±20V FET Feature Depletion Mode
Power Dissipation (Max) 125W (Tc) Rds On (Max) @ Id, Vgs 5.5 Ohm @ 1.5A, 0V
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Supplier Device Package TO-220AB Package / Case TO-220-3
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