PHD18NQ10T,118
Part Number PHD18NQ10T,118
Manufacturer NXP Semiconductors / Freescale
Description MOSFET N-CH 100V 18A DPAK
Quantity Available 84140 pieces
Datasheets PHD18NQ10T,118.pdf
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Technical Information of PHD18NQ10T,118
Manufacturer Part Number PHD18NQ10T,118 Category Discrete Semiconductor
Manufacturer NXP Semiconductors / Freescale Description MOSFET N-CH 100V 18A DPAK
Package / Case Tape & Reel (TR) Quantity in 7 days 0
Series TrenchMOS™ Packaging Tape & Reel (TR)
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 633pF @ 25V FET Feature -
Power Dissipation (Max) 79W (Tc) Rds On (Max) @ Id, Vgs 90 mOhm @ 9A, 10V
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount
Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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