| R6076ENZ1C9 | |
|---|---|
| Part Number | R6076ENZ1C9 |
| Manufacturer | LAPIS Semiconductor |
| Description | MOSFET N-CH 600V 76A TO247 |
| Quantity Available | 60070 pieces |
| Datasheets | R6076ENZ1C9.pdf |
| R6076ENZ1C9 Price | Request Price & Lead Time Online or Email us: [email protected] |
| Technical Information of R6076ENZ1C9 | |||
|---|---|---|---|
| Manufacturer Part Number | R6076ENZ1C9 | Category | Discrete Semiconductor |
| Manufacturer | LAPIS Semiconductor | Description | MOSFET N-CH 600V 76A TO247 |
| Package / Case | Tube | Quantity in 7 days | 0 |
| Series | - | Packaging | Tube |
| FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V | Current - Continuous Drain (Id) @ 25°C | 76A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 260nC @ 10V | Input Capacitance (Ciss) (Max) @ Vds | 6500pF @ 25V |
| Vgs (Max) | ±20V | FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) | Rds On (Max) @ Id, Vgs | 42 mOhm @ 44.4A, 10V |
| Operating Temperature | 150°C (TJ) | Mounting Type | Through Hole |
| Supplier Device Package | TO-247 | Package / Case | TO-247-3 |
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