| RF4E110BNTR | |
|---|---|
| Part Number | RF4E110BNTR |
| Manufacturer | LAPIS Semiconductor |
| Description | MOSFET N-CH 30V 11A 8-HUML |
| Quantity Available | 80420 pieces |
| Datasheets | RF4E110BNTR.pdf |
| RF4E110BNTR Price | Request Price & Lead Time Online or Email us: [email protected] |
| Technical Information of RF4E110BNTR | |||
|---|---|---|---|
| Manufacturer Part Number | RF4E110BNTR | Category | Discrete Semiconductor |
| Manufacturer | LAPIS Semiconductor | Description | MOSFET N-CH 30V 11A 8-HUML |
| Package / Case | Tape & Reel (TR) | Quantity in 7 days | 0 |
| Series | - | Packaging | Tape & Reel (TR) |
| FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V | Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V | Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 15V |
| Vgs (Max) | ±20V | FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) | Rds On (Max) @ Id, Vgs | 11.1 mOhm @ 11A, 10V |
| Operating Temperature | 150°C (TJ) | Mounting Type | Surface Mount |
| Supplier Device Package | 6-HUML2020L8 (2x2) | Package / Case | 8-PowerUDFN |
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