RQ7E110AJTCR | |
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Part Number | RQ7E110AJTCR |
Manufacturer | LAPIS Semiconductor |
Description | NCH 30V 11A MIDDLE POWER MOSFET |
Quantity Available | 28010 pieces |
Datasheets | RQ7E110AJTCR.pdf |
RQ7E110AJTCR Price | Request Price & Lead Time Online or Email us: [email protected] |
Technical Information of RQ7E110AJTCR | |||
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Manufacturer Part Number | RQ7E110AJTCR | Category | Discrete Semiconductor |
Manufacturer | LAPIS Semiconductor | Description | NCH 30V 11A MIDDLE POWER MOSFET |
Package / Case | Tape & Reel (TR) | Quantity in 7 days | 0 |
Series | - | Packaging | Tape & Reel (TR) |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V | Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V | Vgs(th) (Max) @ Id | 1.5V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 4.5V | Input Capacitance (Ciss) (Max) @ Vds | 2410pF @ 15V |
Vgs (Max) | ±12V | FET Feature | - |
Power Dissipation (Max) | 1.5W (Tc) | Rds On (Max) @ Id, Vgs | 9 mOhm @ 4.5A, 11V |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Supplier Device Package | TSMT8 | Package / Case | 8-SMD, Flat Lead |
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