RSD200N10TL
Part Number RSD200N10TL
Manufacturer LAPIS Semiconductor
Description MOSFET N-CH 100V 20A CPT3
Quantity Available 45780 pieces
Datasheets RSD200N10TL.pdf
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Technical Information of RSD200N10TL
Manufacturer Part Number RSD200N10TL Category Discrete Semiconductor
Manufacturer LAPIS Semiconductor Description MOSFET N-CH 100V 20A CPT3
Package / Case Tape & Reel (TR) Quantity in 7 days 0
Series - Packaging Tape & Reel (TR)
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 48.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 25V FET Feature -
Power Dissipation (Max) 20W (Tc) Rds On (Max) @ Id, Vgs 52 mOhm @ 10A, 10V
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package CPT3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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