RSD221N06TL
Part Number RSD221N06TL
Manufacturer LAPIS Semiconductor
Description MOSFET N-CH 60V 22A CPT3
Quantity Available 25120 pieces
Datasheets RSD221N06TL.pdf
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Technical Information of RSD221N06TL
Manufacturer Part Number RSD221N06TL Category Discrete Semiconductor
Manufacturer LAPIS Semiconductor Description MOSFET N-CH 60V 22A CPT3
Package / Case Tape & Reel (TR) Quantity in 7 days 0
Series - Packaging Tape & Reel (TR)
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Vgs(th) (Max) @ Id 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 10V FET Feature -
Power Dissipation (Max) 850mW (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs 26 mOhm @ 22A, 10V
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package CPT3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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