RW1A025APT2CR
Part Number RW1A025APT2CR
Manufacturer LAPIS Semiconductor
Description MOSFET P-CH 12V 2.5A WEMT6
Quantity Available 14170 pieces
Datasheets RW1A025APT2CR.pdf
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Technical Information of RW1A025APT2CR
Manufacturer Part Number RW1A025APT2CR Category Discrete Semiconductor
Manufacturer LAPIS Semiconductor Description MOSFET P-CH 12V 2.5A WEMT6
Package / Case Tape & Reel (TR) Quantity in 7 days 225808
Series - Packaging Tape & Reel (TR)
FET Type P-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 6V
Vgs (Max) -8V FET Feature -
Power Dissipation (Max) 400mW (Ta) Rds On (Max) @ Id, Vgs 62 mOhm @ 2.5A, 4.5V
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package 6-WEMT Package / Case SOT-563, SOT-666
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