SI4410BDY-T1-E3
Part Number SI4410BDY-T1-E3
Manufacturer Vishay / Siliconix
Description MOSFET N-CH 30V 7.5A 8-SOIC
Quantity Available 49380 pieces
Datasheets SI4410BDY-T1-E3.pdf
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Technical Information of SI4410BDY-T1-E3
Manufacturer Part Number SI4410BDY-T1-E3 Category Discrete Semiconductor
Manufacturer Vishay / Siliconix Description MOSFET N-CH 30V 7.5A 8-SOIC
Package / Case Tape & Reel (TR) Quantity in 7 days 77248
Series TrenchFET® Packaging Tape & Reel (TR)
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds -
Vgs (Max) ±20V FET Feature -
Power Dissipation (Max) 1.4W (Ta) Rds On (Max) @ Id, Vgs 13.5 mOhm @ 10A, 10V
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width)
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