SI4446DY-T1-GE3
Part Number SI4446DY-T1-GE3
Manufacturer Vishay / Siliconix
Description MOSFET N-CH 40V 3.9A 8-SOIC
Quantity Available 20910 pieces
Datasheets SI4446DY-T1-GE3.pdf
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Technical Information of SI4446DY-T1-GE3
Manufacturer Part Number SI4446DY-T1-GE3 Category Discrete Semiconductor
Manufacturer Vishay / Siliconix Description MOSFET N-CH 40V 3.9A 8-SOIC
Package / Case Tape & Reel (TR) Quantity in 7 days 3045
Series TrenchFET® Packaging Tape & Reel (TR)
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 3.9A (Ta)
Vgs(th) (Max) @ Id 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 20V FET Feature -
Power Dissipation (Max) 1.1W (Ta) Rds On (Max) @ Id, Vgs 40 mOhm @ 5.2A, 10V
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width)
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