SI7170DP-T1-GE3
Part Number SI7170DP-T1-GE3
Manufacturer Vishay / Siliconix
Description MOSFET N-CH 30V 40A PPAK SO-8
Quantity Available 83430 pieces
Datasheets SI7170DP-T1-GE3.pdf
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Technical Information of SI7170DP-T1-GE3
Manufacturer Part Number SI7170DP-T1-GE3 Category Discrete Semiconductor
Manufacturer Vishay / Siliconix Description MOSFET N-CH 30V 40A PPAK SO-8
Package / Case Tape & Reel (TR) Quantity in 7 days 104635
Series TrenchFET® Packaging Tape & Reel (TR)
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Vgs(th) (Max) @ Id 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 4355pF @ 15V FET Feature -
Power Dissipation (Max) 5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs 3.4 mOhm @ 15A, 10V
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8
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