SIA459EDJ-T1-GE3
Part Number SIA459EDJ-T1-GE3
Manufacturer Vishay / Siliconix
Description MOSFET P-CH 20V 9A SC70
Quantity Available 46260 pieces
Datasheets SIA459EDJ-T1-GE3.pdf
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Technical Information of SIA459EDJ-T1-GE3
Manufacturer Part Number SIA459EDJ-T1-GE3 Category Discrete Semiconductor
Manufacturer Vishay / Siliconix Description MOSFET P-CH 20V 9A SC70
Package / Case Tape & Reel (TR) Quantity in 7 days 0
Series TrenchFET® Packaging Tape & Reel (TR)
FET Type P-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 885pF @ 10V
Vgs (Max) ±12V FET Feature -
Power Dissipation (Max) 2.9W (Ta), 15.6W (Tc) Rds On (Max) @ Id, Vgs 35 mOhm @ 5A, 4.5V
Operating Temperature -50°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6 Single Package / Case PowerPAK® SC-70-6
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