SIHB24N65EF-GE3
Part Number SIHB24N65EF-GE3
Manufacturer Vishay / Siliconix
Description MOSFET N-CH 650V 24A TO263
Quantity Available 71630 pieces
Datasheets SIHB24N65EF-GE3.pdf
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Technical Information of SIHB24N65EF-GE3
Manufacturer Part Number SIHB24N65EF-GE3 Category Discrete Semiconductor
Manufacturer Vishay / Siliconix Description MOSFET N-CH 650V 24A TO263
Package / Case Quantity in 7 days 0
Series E FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 24A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 122nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2774pF @ 100V Vgs (Max) ±30V
FET Feature - Power Dissipation (Max) 250W (Tc)
Rds On (Max) @ Id, Vgs 156 mOhm @ 12A, 10V Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package TO-263 (D²Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
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