SIHD6N65E-GE3
Part Number SIHD6N65E-GE3
Manufacturer Vishay / Siliconix
Description MOSFET N-CH 650V 7A TO252
Quantity Available 46870 pieces
Datasheets SIHD6N65E-GE3.pdf
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Technical Information of SIHD6N65E-GE3
Manufacturer Part Number SIHD6N65E-GE3 Category Discrete Semiconductor
Manufacturer Vishay / Siliconix Description MOSFET N-CH 650V 7A TO252
Package / Case Tube Quantity in 7 days 0
Series - Packaging Tube
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 820pF @ 100V
Vgs (Max) ±30V FET Feature -
Power Dissipation (Max) 78W (Tc) Rds On (Max) @ Id, Vgs 600 mOhm @ 3A, 10V
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package D-PAK (TO-252AA) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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