| SIHD6N65E-GE3 | |
|---|---|
| Part Number | SIHD6N65E-GE3 |
| Manufacturer | Vishay / Siliconix |
| Description | MOSFET N-CH 650V 7A TO252 |
| Quantity Available | 46870 pieces |
| Datasheets | SIHD6N65E-GE3.pdf |
| SIHD6N65E-GE3 Price | Request Price & Lead Time Online or Email us: [email protected] |
| Technical Information of SIHD6N65E-GE3 | |||
|---|---|---|---|
| Manufacturer Part Number | SIHD6N65E-GE3 | Category | Discrete Semiconductor |
| Manufacturer | Vishay / Siliconix | Description | MOSFET N-CH 650V 7A TO252 |
| Package / Case | Tube | Quantity in 7 days | 0 |
| Series | - | Packaging | Tube |
| FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V | Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V | Input Capacitance (Ciss) (Max) @ Vds | 820pF @ 100V |
| Vgs (Max) | ±30V | FET Feature | - |
| Power Dissipation (Max) | 78W (Tc) | Rds On (Max) @ Id, Vgs | 600 mOhm @ 3A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
| Supplier Device Package | D-PAK (TO-252AA) | Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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