SIHP33N60EF-GE3
Part Number SIHP33N60EF-GE3
Manufacturer Vishay / Siliconix
Description MOSFET N-CH 600V 33A TO-220-3
Quantity Available 76480 pieces
Datasheets SIHP33N60EF-GE3.pdf
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Technical Information of SIHP33N60EF-GE3
Manufacturer Part Number SIHP33N60EF-GE3 Category Discrete Semiconductor
Manufacturer Vishay / Siliconix Description MOSFET N-CH 600V 33A TO-220-3
Package / Case Tube Quantity in 7 days 0
Series - Packaging Tube
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 155nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 3454pF @ 100V
Vgs (Max) ±30V FET Feature -
Power Dissipation (Max) 278W (Tc) Rds On (Max) @ Id, Vgs 98 mOhm @ 16.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Supplier Device Package TO-220AB Package / Case TO-220-3
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