SIRA12DP-T1-GE3
Part Number SIRA12DP-T1-GE3
Manufacturer Vishay / Siliconix
Description MOSFET N-CH 30V 25A PPAK SO-8
Quantity Available 20350 pieces
Datasheets SIRA12DP-T1-GE3.pdf
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Technical Information of SIRA12DP-T1-GE3
Manufacturer Part Number SIRA12DP-T1-GE3 Category Discrete Semiconductor
Manufacturer Vishay / Siliconix Description MOSFET N-CH 30V 25A PPAK SO-8
Package / Case Digi-Reel® Quantity in 7 days 87255
Series TrenchFET® Packaging Digi-Reel®
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2070pF @ 15V
Vgs (Max) +20V, -16V FET Feature -
Power Dissipation (Max) 4.5W (Ta), 31W (Tc) Rds On (Max) @ Id, Vgs 4.3 mOhm @ 10A, 10V
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8
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