SIUD412ED-T1-GE3
Part Number SIUD412ED-T1-GE3
Manufacturer Vishay / Siliconix
Description MOSFET N-CH 12V 500MA 0806
Quantity Available 76330 pieces
Datasheets SIUD412ED-T1-GE3.pdf
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Technical Information of SIUD412ED-T1-GE3
Manufacturer Part Number SIUD412ED-T1-GE3 Category Discrete Semiconductor
Manufacturer Vishay / Siliconix Description MOSFET N-CH 12V 500MA 0806
Package / Case Digi-Reel® Quantity in 7 days 0
Series TrenchFET® Packaging Digi-Reel®
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.71nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 21pF @ 6V
Vgs (Max) ±5V FET Feature -
Power Dissipation (Max) 1.25W (Ta) Rds On (Max) @ Id, Vgs 340 mOhm @ 500mA, 4.5V
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package PowerPAK® 0806 Package / Case PowerPAK® 0806
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