STB6N65M2
Part Number STB6N65M2
Manufacturer N/A
Description MOSFET N-CH 650V 4A D2PAK
Quantity Available 81980 pieces
Datasheets STB6N65M2.pdf
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Technical Information of STB6N65M2
Manufacturer Part Number STB6N65M2 Category Discrete Semiconductor
Manufacturer N/A Description MOSFET N-CH 650V 4A D2PAK
Package / Case Digi-Reel® Quantity in 7 days 0
Series MDmesh™ Packaging Digi-Reel®
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 226pF @ 100V
Vgs (Max) ±25V FET Feature -
Power Dissipation (Max) 60W (Tc) Rds On (Max) @ Id, Vgs 1.35 Ohm @ 2A, 10V
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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