| TK10E60W,S1VX | |
|---|---|
| Part Number | TK10E60W,S1VX |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | MOSFET N CH 600V 9.7A TO-220 |
| Quantity Available | 53870 pieces |
| Datasheets | TK10E60W,S1VX.pdf |
| TK10E60W,S1VX Price | Request Price & Lead Time Online or Email us: [email protected] |
| Technical Information of TK10E60W,S1VX | |||
|---|---|---|---|
| Manufacturer Part Number | TK10E60W,S1VX | Category | Discrete Semiconductor |
| Manufacturer | Toshiba Semiconductor and Storage | Description | MOSFET N CH 600V 9.7A TO-220 |
| Package / Case | Tube | Quantity in 7 days | 0 |
| Series | DTMOSIV | Packaging | Tube |
| FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V | Current - Continuous Drain (Id) @ 25°C | 9.7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Vgs(th) (Max) @ Id | 3.7V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V | Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 300V |
| Vgs (Max) | ±30V | FET Feature | Super Junction |
| Power Dissipation (Max) | 100W (Tc) | Rds On (Max) @ Id, Vgs | 380 mOhm @ 4.9A, 10V |
| Operating Temperature | 150°C (TJ) | Mounting Type | Through Hole |
| Supplier Device Package | TO-220 | Package / Case | TO-220-3 |
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