TK34E10N1,S1X
Part Number TK34E10N1,S1X
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 100V 75A TO-220
Quantity Available 81850 pieces
Datasheets TK34E10N1,S1X.pdf
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Technical Information of TK34E10N1,S1X
Manufacturer Part Number TK34E10N1,S1X Category Discrete Semiconductor
Manufacturer Toshiba Semiconductor and Storage Description MOSFET N-CH 100V 75A TO-220
Package / Case Tube Quantity in 7 days 0
Series U-MOSVIII-H Packaging Tube
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 50V
Vgs (Max) ±20V FET Feature -
Power Dissipation (Max) 103W (Tc) Rds On (Max) @ Id, Vgs 9.5 mOhm @ 17A, 10V
Operating Temperature 150°C (TJ) Mounting Type Through Hole
Supplier Device Package TO-220 Package / Case TO-220-3
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